 | |
| Names | |
|---|---|
| IUPAC name
Manganese arsenide | |
| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.031.331 |
| EC Number |
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PubChem CID |
|
| |
| |
| Properties | |
| MnAs | |
| Molar mass | 129.859 g/mol |
| Structure[1] | |
| Hexagonal (NiAs) | |
| P63/mmc (No. 194), hP4 | |
a = 0.4 nm, c = 0.5702 nm | |
Formula units (Z) |
2 |
| Hazards | |
| Flash point | Non-flammable |
| Related compounds | |
Other anions |
Manganese silicide |
Other cations |
Gallium arsenide Nickel arsenide |
Related compounds |
Gallium manganese arsenide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references | |
Manganese arsenide (MnAs) is an intermetallic compound, an arsenide of manganese. It forms ferromagnetic crystals with hexagonal (NiAs-type) crystal structure, which convert to the paramagnetic orthorhombic β-phase upon heating to 45 °C (113 °F). MnAs has potential applications in spintronics, for electrical spin injection into GaAs and Si based devices.[2]
References
- ↑ Ido, H.; Yasuda, S.; Kido, M.; Kido, G.; Miyakawa, T. (1988). "EFFECT OF HIGH PRESSURE AND HIGH MAGNETIC FIELD ON MAGNETISM OF MnAs1−xSbx (0 ≤ x ≤ 0.3)". Le Journal de Physique Colloques. 49: C8-167-C8-168. doi:10.1051/jphyscol:1988870.
- ↑ Mocuta, Cristian; Bonamy, Daniel; Stanescu, Stefan; El Moussaoui, Souliman; Barbier, Antoine; Montaigne, François; MacCherozzi, Francesco; Bauer, Ernst; Belkhou, Rachid (2017). "Finite size effect on the structural and magnetic properties of MnAs/GaAs(001) patterned microstructures thin films". Scientific Reports. 7 (1): 16970. Bibcode:2017NatSR...716970M. doi:10.1038/s41598-017-17251-y. PMC 5717107. PMID 29208928.
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