Jerry G. Fossum | |
|---|---|
| Born | July 18, 1943 Phoenix, Arizona, U.S. |
| Academic background | |
| Education | University of Arizona (BS, MS, PhD) |
| Academic work | |
| Discipline | Electrical engineering |
| Sub-discipline | Semiconductor device theory Semiconductor device modeling Integrated circuit design |
| Institutions | Sandia National Laboratories University of Florida |
Jerry G. Fossum (born July 18, 1943) is an American electrical engineer who is a Distinguished Professor Emeritus at the University of Florida College of Engineering.
Early life and education
Fossum is a native of Phoenix, Arizona. He earned a Bachelor of Science, Master of Science, and PhD in electrical engineering from the University of Arizona.
Career
Fossum worked for Sandia National Laboratories before joining the University of Florida faculty in 1978. In 1983, he was elected a fellow of the IEEE.[1] Fossum received the J. J. Ebers Award in 2004.[2] His scholarship focuses on the semiconductor device theory, modeling, and design.[3]
References
- ↑ Huang, Ya-Chi; Chiang, Meng-Hsueh; Wang, Shui-Jinn; Fossum, Jerry G. (March 2017). "GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node". IEEE Journal of the Electron Devices Society. 5 (3): 164–169. doi:10.1109/JEDS.2017.2689738.
- ↑ "EDS Honors SOI Pioneer". SOI Industry Consortium. 18 April 2005. Retrieved 22 February 2022.
- ↑ "Jerry G. Fossum Speaker Profile" (PDF). cmu.edu.
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